Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
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DOI：
10.1016/s0924-4247(98)00128-9
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发表时间：
1998-10-01
影响因子：
4.6
通讯作者：
Suga, T
中科院分区：
文献类型：
--
作者：
Takagi, H;Maeda, R;Suga, T
我们通过真空中的表面活化方法研究了硅（Si）和二氧化硅（SiO₂）的低温键合。在该方法中，使用氩（Ar）束蚀刻来创建一个具有强键合能力的清洁表面。样品在真空中键合，不暴露于大气中。通过该方法在室温下制备的硅/硅键合强度相当于体材料强度。通过该方法进行的二氧化硅/二氧化硅键合在退火前的强度是常规键合的两倍。此外，由氩束制备的键合比由诸如水（H₂O）和氨（NH₃）等反应性分子束蚀刻制备的键合更强。通过将蚀刻后的硅表面暴露于真空室中的残余气体来研究表面氧化的影响。蚀刻表面上诸如水（H₂O）等反应性分子的吸附会导致键合强度降低，而氩气不会影响键合。这些结果意味着由氩束蚀刻的清洁表面即使在室温下也具有很强的键合能力。（C）1998年，爱思唯尔科学出版公司。版权所有。
We have investigated low-temperature bonding of Si and SiO2 by the surface activation method in vacuum. In the method, Ar beam etching is used to create a clean surface which has strong bonding ability. The specimens are bonded in the vacuum without exposing them to the atmosphere. The strength of Si/Si bonding prepared at room temperature by the method is equivalent to the bulk strength. SiO2/SiO2 bonding by the method is twice as strong as conventional bonding before annealing. In addition, the bonding prepared by Ar beam is stronger than that prepared by reactive molecule beam etching such as H2O and NH3. The influence of surface oxidation was examined by exposing an etched Si surface to residual gas in the vacuum chamber. Adsorption of reactive molecules such as H2O on the etched surface causes reduction of bonding strength, whereas Ar gas does not affect the bonding. These results mean that a clean surface etched by Ar beam has strong bonding ability even at room temperature. (C) 1998 Elsevier Science S.A. All rights reserved.