Magnetization switching schemes for nanoscale three-terminal spintronics devices
Magnetization switching schemes for nanoscale three-terminal spintronics devices
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DOI：
10.7567/jjap.56.0802a1
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发表时间：
2017-06
影响因子：
1.5
通讯作者：
S. Fukami;H. Ohno
中科院分区：
文献类型：
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作者：
S. Fukami;H. Ohno
在集成电路中利用基于自旋电子学的非易失性存储器为实现超低功耗和高性能电子器件提供了一条有前途的途径。目前，具有自旋传递转矩开关的双端器件已经得到了广泛的发展，而具有三端结构的器件也越来越受到人们的关注。对于应用来说，最重要的是对磁化的有效控制，对应于纳米级器件中的信息写入。本文综述了电流感应畴壁运动和自旋轨道转矩感应开关的研究进展，并将其应用于纳米级三端自旋电子器件的写入操作。对于畴壁运动，器件性能的尺寸依赖性小于20nm将被显示，并将讨论结果背后的潜在机制。对于自旋轨道转矩感应开关，将讨论控制阈值电流密度的因素和降低阈值电流密度的策略。还将审查使用模拟自旋-轨道扭矩装置的人工智能概念验证演示。
Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin–orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin–orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin–orbit torque device will also be reviewed.