Contact resistance and electrode material dependence of air-stable n-channel organic field-effect transistors using dimethyldicyanoquinonediimine (DMDCNQI)
Contact resistance and electrode material dependence of air-stable n-channel organic field-effect transistors using dimethyldicyanoquinonediimine (DMDCNQI)
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DOI：
10.1039/b808435a
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发表时间：
2008-08
影响因子：
--
通讯作者：
H. Wada;K. Shibata;Y. Bando;Takehiko Mori
中科院分区：
文献类型：
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作者：
H. Wada;K. Shibata;Y. Bando;Takehiko Mori
基于电子接受分子二甲基二氰醌二亚胺（DMDCNQI）制造了在环境条件下性能稳定的N沟道有机场效应晶体管。通过改变源极和漏极材料来研究晶体管：Au、Ag、Cu 和高导电性有机电荷转移盐（四硫富瓦烯）（四氰基醌二甲烷）[(TTF)(TCNQ)]。具有Au电极的器件表现出最低的接触电阻和最高的电子迁移率（底部接触配置为0.011 cm2V−1 s−1），并且性能按Au > (TTF)(TCNQ) > Ag > Cu的顺序下降。这个顺序似乎与金属功函数无关，而是归因于有机-金属界面势。 DMDCNQI 与 Ag 和 Cu 形成高导电电荷转移络合物，但络合物层增加了界面电位以及电子注入势垒，并且还增加了短沟道器件的截止电流。空气稳定性不仅仅由有机半导体决定，还很大程度上受到电极材料的影响。
N-channel organic field-effect transistors with stable performance at ambient conditions are fabricated on the basis of an electron-accepting molecule, dimethyldicyanoquinone diimine (DMDCNQI). The transistors are investigated by varying source and drain electrode materials: Au, Ag, Cu, and a highly conducting organic charge-transfer salt, (tetrathiafulvalene)(tetracyanoquinodimethane) [(TTF)(TCNQ)]. The devices with the Au electrode show lowest contact resistance and highest electron mobility (0.011 cm2V−1 s−1 for bottom-contact configuration), and the performance decreases in the order of Au > (TTF)(TCNQ) > Ag > Cu. This order does not seem related to the metal work functions, but is attributed to the organic–metal interfacial potentials. DMDCNQI forms highly conducting charge-transfer complexes with Ag and Cu, but the complex layer increases the interfacial potential as well as the electron-injection barrier and also increases the off-current for short channel devices. The air stability is not determined solely by the organic semiconductor but is considerably influenced by the electrode materials.