Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma
Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma
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DOI：
10.1002/ppap.201900243
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发表时间：
2020-03
影响因子：
3.5
通讯作者：
A. Haq;Philipp Lucke;J. Benedikt;P. Maguire;D. Mariotti
中科院分区：
文献类型：
--
作者：
A. Haq;Philipp Lucke;J. Benedikt;P. Maguire;D. Mariotti
离子，代表了导致成核和生长的重要途径。TMS浓度和NC停留时间的组合控制NC平均尺寸和相应的分布。对于较高的前驱体浓度，反应动力学足够快，可以促进聚结。
ion, represents important paths leading to nucleation and growth. The combination of TMS concentration and NC residence time controls the NC mean size and the corresponding distributions. For higher precursor concentrations, the reaction kinetics is sufficiently fast to promote coalescence.