Robust High-Capacitance Polymer Gate Dielectrics for Stable Low-Voltage Organic Field-Effect Transistor Sensors
Robust High-Capacitance Polymer Gate Dielectrics for Stable Low-Voltage Organic Field-Effect Transistor Sensors
复制标题
DOI：
10.1002/aelm.201901127
复制
发表时间：
2020-03-01
影响因子：
6.2
通讯作者：
Turner, Michael L.
中科院分区：
文献类型：
--
作者：
Rahmanudin, Aiman;Tate, Daniel J.;Turner, Michael L.
有机场效应晶体管（OFFERT）作为化学传感器的应用范围从食品腐败的监测到空气质量的测定和疾病的诊断显示出巨大的前景。然而，要使这些器件真正有用，它们必须在长时间内提供可靠和稳定的低压操作。解决这一挑战的一个重要因素是开发一种高电容栅极电介质，该电介质具有优异的绝缘性和强大的耐化学性，可抵抗有机半导体（OSC）的溶液处理。报道了一种双层栅电介质的开发，该双层栅电介质包含在OSC/电介质界面处用光交联的化学抗性低k甲基丙烯酸酯基共聚物缓冲层改性的高k含氟聚合物弛豫铁电层。使用这种双层电介质的底栅OFET化学传感器在低电压下工作，具有出色的工作稳定性。它们在氨暴露的多个周期（2至50 ppm）内提供可靠的传感性能，估计检测限低于1 ppm。
Organic field-effect transistors (OFETs) have shown great promise for use as chemical sensors for applications that range from the monitoring of food spoilage to the determination of air quality and the diagnosis of disease. However, for these devices to be truly useful, they must deliver reliable and stable low-voltage operation over extended timescales. An important element to address this challenge is the development of a high-capacitance gate dielectric that delivers excellent insulation with robust chemical resistance against the solution processing of organic semiconductors (OSC). The development of a bilayer gate dielectric containing a high-k fluoropolymer relaxor ferroelectric layer modified at the OSC/dielectric interface with a photo-crosslinked chemically resistant low-k methacrylate-based copolymer buffer layer is reported. Bottom-gate OFET chemical sensors using this bilayer dielectric operate at low-voltage with exceptional operational stability. They deliver reliable sensing performance over multiple cycles of ammonia exposure (2 to 50 ppm) with an estimated limit-of-detection below 1 ppm.