Amorphous silicon deposition rates in diode and triode discharges
Amorphous silicon deposition rates in diode and triode discharges
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二极管和三极管放电中的非晶硅沉积速率
DOI：
10.1063/1.337312
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
A. Gallagher
中科院分区：
文献类型：
--
作者：
A. Gallagher
自由基沉积在放电电极和基板表面上的相对速率计算为两个和三个电极放电。反应速率、扩散系数、屏电极透明度和表面粘附系数是通解中的参数。然后选择参数来描述用于a-Si：H光伏生产的典型硅烷放电，并评估屏幕透明度和其他参数对衬底沉积速率的影响。然后，我们表明，在三电极放电中，沉积速率与屏幕-基板间距的测量结果被误解为是由于气体反应，而它主要是由于屏幕沉积。最后，我们注意到一些可能性，测量沉积参数和不同的混合沉积物种。
The relative rates of radical deposition on discharge electrodes and substrate surfaces are calculated for two‐and three‐electrode discharges. The reaction rate, diffusion coefficient, screen‐electrode transparency, and surface sticking coefficient are parameters in the general solution. The parameters are then chosen to describe typical silane discharges used for a‐Si:H photovoltaic production, and the effect of screen transparency and other parameters on substrate deposition rates is evaluated. We then show that a measurement of deposition rate versus screen–substrate spacing in a three‐electrode discharge has been misinterpreted as due to gas reactions, whereas it is primarily due to screen deposition. Finally, we note some possibilities for measuring deposition parameters and for varying the mix of depositing species.