Dynamics of photoexcited high density carriers in ZnO epitaxial thin films
Dynamics of photoexcited high density carriers in ZnO epitaxial thin films
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DOI：
10.1002/1521-3951(200201)229:2
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发表时间：
2002
影响因子：
1.6
通讯作者：
J. Takeda;H. Jinnouchi;S. Kurita;Yefan Chen;T. Yao
中科院分区：
文献类型：
--
作者：
J. Takeda;H. Jinnouchi;S. Kurita;Yefan Chen;T. Yao
利用光学克尔门方法测量了ZnO外延薄膜在激子共振激发下的飞秒时间分辨发光光谱。我们观察到的热载流子的松弛，直到建立的发光由于电子空穴等离子体（EHP）状态和恢复的重整化带隙由于电子与空穴的辐射复合在准热化EHP状态。热载流子的弛豫主要来自载流子-载流子碰撞，但也可能包含载流子-LO声子散射。
Time-resolved luminescence spectra of ZnO epitaxial thin films were measured by the optical Kerr gate method in femtosecond time regime under resonant excitation of the excitonic state. We observed the relaxation of hot carriers until the buildup of luminescence due to an electron-hole plasma (EHP) state and recovery of the renormalized bandgap due to radiative recombination of electrons with holes in the quasi-thermalized EHP state. The relaxation of hot carriers mainly comes from carrier-carrier collisions but might include in part carrier-LO phonon scattering.