Improvement of CIGS solar cell efficiency with graded bandgap absorber layer
Improvement of CIGS solar cell efficiency with graded bandgap absorber layer
复制标题
利用分级带隙吸收层提高 CIGS 太阳能电池效率
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Meysam Amirahmadi
中科院分区：
文献类型：
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作者：
Seyed Reza Fatemi Shariat Panahi;Abdollah Abbasi;V. Ghods;Meysam Amirahmadi
有几种方法可以提高太阳能电池的效率。除了提高效率外，重要的课题是以较低的成本建造电池，并设法减少电池的热损失。本文对CIGS太阳电池进行了研究，提出了在降低CIGS太阳电池损耗的同时，以最小的吸收层厚度获得最大效率的方法。为了模拟和进行数学计算，在本研究中使用了Silvaco的Atlas软件。应当注意，在所有提出的结构中，层的厚度被最小化，并且吸收体层也是p型的。在第一阶段，模拟ZnO：Al/Zn 0.83 Mg 0.17 O/CdS/梯度CIGS/MO的结构，其中梯度CIGS（吸收层）的厚度为1 μm。渐变CIGS是一种结构，其中材料CuIn 1− x Ga x Se 2的带隙从x 1到x 2线性变化。在这项研究中，x的变化是从0.7到0.1，因此x的减小对应于带隙线性地从1.45到1.07 eV的减小。在此阶段，电池效率为17.1%。在第二阶段中，升级缓冲层以提高电池效率，即使用带隙为2.8eV的ZnO 0.5S 0.5代替带隙为2.4eV的CdS层，使得效率变为19.0%。在第三阶段中，在第一阶段的结构中添加电子反射层;实际上，在该阶段中，显示了电子反射层对第一阶段的太阳能电池的影响。在第四阶段（最后阶段）中，CGS（CGS是CuGaSe 2）层被用作电子反射层，这使得电池效率达到28.3%。
There are several ways to increase the efficiency of a solar cell. In addition to increasing efficiency, the important subject is to build the cell at a lower cost and try to reduce the heat losses of the cell. In this article, research was conducted on CIGS solar cell in which some methods were proposed that in addition to reducing the losses of a CIGS solar cell, we could achieve maximum efficiency with the minimum thickness of the absorber layer. To simulate and perform mathematical calculations, the Atlas software of Silvaco was used in this research. It should be noted that in all proposed structures, the thickness of the layer is minimized, and also the absorber layer is p -type. In the first stage, the structure of a ZnO:Al/Zn 0.83 Mg 0.17 O/CdS/Graded CIGS/MO was simulated in which the thickness of the graded CIGS (absorber layer) is 1 µm. Graded CIGS is a structure in which the bandgap of material CuIn 1− x Ga x Se 2 changes linearly from x 1 to x 2 . In this study, the x variation is from 0.7 to 0.1, so that the decrease in x corresponds to the decrease in band gap linearly from 1.45 to 1.07 eV. In this stage, the cell efficiency was 17.1%. In the second stage, the buffer layer was upgraded to increase the cell efficiency, that is, instead of CdS layer with the bandgap of 2.4 eV, ZnO 0.5 S 0.5 with the bandgap of 2.8 eV was used that made the efficiency to become 19.0%. In the third stage, an electron reflector layer was added to the structure of the first stage; indeed at this stage, the effect of the electron reflector layer on the solar cell of the first stage was displayed. In the fourth stage (last stage), CGS (CGS is CuGaSe 2 ) layer was used as the electron reflector layer, which caused the cell efficiency to reach 28.3%.