Synthesis of GaN Crystal Using Gallium Hydride
Synthesis of GaN Crystal Using Gallium Hydride
复制标题
使用氢化镓合成 GaN 晶体
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
T. Sasaki
中科院分区：
文献类型：
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作者：
F. Kawamura;M. Imade;M. Yoshimura;Y. Mori;T. Sasaki
提出了一种新的大面积c轴GaN薄膜的制备方法。利用金属Ga与氢气反应生成的氢化镓作为Ga源，与NH3气体反应，在蓝宝石（0001）衬底上生长GaN晶体。2.7在衬底上可以生长出μ m厚的c轴取向GaN薄膜。研究了氢气与金属镓反应合成氢化镓的稳定条件。因此，氢化镓在通常用于GaN生长的温度约1000°C下稳定。这些结果表明，使用氢化镓作为Ga源的主要物质可以提供以高纯度水平生长GaN晶体的相对便宜的方法。
A new method for synthesizing a large area of c-axis GaN film was developed. The gallium hydride which was formed by the reaction between metal-Ga and hydrogen gas was used as the Ga source, and reacted with NH3 gas to grow GaN crystals on the sapphire (0001) substrate. 2.7 µm-thick GaN film with c-axis orientation could be grown on the substrate. Stable conditions for the synthesis of gallium hydride by the reaction of H2 gas with metal-Ga were examined. As a result, gallium hydride is stable at about 1000°C which is a temperature commonly used for the growth of GaN. These results show that the use of gallium hydride as the predominant species of the Ga source can provide a relatively inexpensive method of growing GaN crystals at a high level of purity.