Colossal magnetoresistance in Mn2+ oxypnictides NdMnAsO(1-x)F(x).
Colossal magnetoresistance in Mn2+ oxypnictides NdMnAsO(1-x)F(x).
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DOI：
10.1021/ja302328t
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发表时间：
2012-07
影响因子：
15
通讯作者：
E. Wildman;J. Skakle;N. Emery;A. Mclaughlin
中科院分区：
文献类型：
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作者：
E. Wildman;J. Skakle;N. Emery;A. Mclaughlin
巨磁电阻是一种罕见的现象，其中材料的电子电阻率可以在施加磁场后降低几个数量级。这种效应可能是下一代存储设备的基础。在这里，我们报告的CMR在反铁磁氧化铌酸盐NdMnAsO（1-x）F（x）作为一个反铁磁绝缘相和顺磁半导体之间的竞争的结果时，施加磁场。Mn（2+）oxypnictides是相对未开发的，并且新颖化合物的定制合成可以产生用于进一步研究和优化的一系列材料。
Colossal magnetoresistance is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO(1-x)F(x) as a result of competition between an antiferromagnetic insulating phase and a paramagnetic semiconductor upon application of a magnetic field. Mn(2+) oxypnictides are relatively unexplored, and tailored synthesis of novel compounds could result in an array of materials for further investigation and optimization.