A Physics-Based Model for Snapback-Type ESD Protection Devices
A Physics-Based Model for Snapback-Type ESD Protection Devices
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DOI：
10.1109/temc.2023.3303493
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发表时间：
2023-10
影响因子：
2.1
通讯作者：
Xin Yan;Seyed Mostafa Mousavi;Li Shen;Yang Xu;Wei Zhang;Sergej Bub;S. Holland;D. Beetner
中科院分区：
文献类型：
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作者：
Xin Yan;Seyed Mostafa Mousavi;Li Shen;Yang Xu;Wei Zhang;Sergej Bub;S. Holland;D. Beetner
本文提出了一种基于物理的深骤回瞬态电压抑制器（TVS）简化模型。虽然基于物理，但参数和组件的数量最小化，因此可以根据封装TVS的可用测量轻松调整模型。通过向模型中添加非线性阻尼分量，消除了在以前的骤回器件模型中出现的SPICE收敛问题。在本研究进行的任何模拟中均未发现收敛问题，其中包括具有多个电平和上升时间的传输线脉冲测试。该模型被用来代表两个不同的TVS器件，并在设备和系统级仿真验证。准静态和瞬态行为的模拟匹配的测量结果之间的所有测试的情况下，约20%。
A simplified physical-based model for deep-snapback transient voltage suppressors (TVS) is developed in this article. While based on physics, the number of parameters and components is minimized, so the model can be tuned easily from available measurements of the packaged TVS. SPICE convergence issues seen in previous snapback device models are eliminated by adding nonlinear damping components to the model. No convergence issues were seen among any of the simulations performed for this study, which includes transmission-line pulse tests with multiple levels and rise times. The proposed model was used to represent two different TVS devices and was validated in both device- and system-level simulations. Simulations of quasi-static and transient behavior matched measurement results within about 20% among all the tested cases.