Area dependence of interlayer tunneling in strongly correlated bilayer two-dimensional electron systems at nuT=1
Area dependence of interlayer tunneling in strongly correlated bilayer two-dimensional electron systems at nuT=1
复制标题
nuT=1 时强相关双层二维电子系统中层间隧道效应的面积依赖性
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
K. West
中科院分区：
文献类型：
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作者：
A. Finck;A. Champagne;J. Eisenstein;L. Pfeiffer;K. West
研究了相干半导体类约瑟夫森层间隧穿信号的面积和周长依赖性。
研究了双层二维电子系统中u_T=1的量子霍尔相。各种尺寸和形状的静电顶栅用于局部定义不同的栅极。
u_T=1$同一样本中的区域。在非相干相界附近
在大的层间距下，u_T=1$态的隧穿电导与隧穿区的总面积成正比。这意味着隧道在$
u_T=1$是该区域的体现象。
The area and perimeter dependence of the Josephson-like interlayer tunneling signature of the coherent $
u_T=1$ quantum Hall phase in bilayer two-dimensional electron systems is examined. Electrostatic top gates of various sizes and shapes are used to locally define distinct $
u_T=1$ regions in the same sample. Near the phase boundary with the incoherent $
u_T=1$ state at large layer separation, our results demonstrate that the tunneling conductance in the coherent phase is closely proportional to the total area of the tunneling region. This implies that tunneling at $
u_T=1$ is a bulk phenomenon in this regime.