Lasing in cuprous iodide microwires
Lasing in cuprous iodide microwires
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DOI：
10.1063/1.4990524
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发表时间：
2017-07
影响因子：
4
通讯作者：
M. Wille;E. Krüger;S. Blaurock;V. Zviagin;Rafael Deichsel;G. Benndorf;Lukas Trefflich;V. Gottschalch;H. Krautscheid;R. Schmidt‐Grund;M. Grundmann
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文献类型：
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作者：
M. Wille;E. Krüger;S. Blaurock;V. Zviagin;Rafael Deichsel;G. Benndorf;Lukas Trefflich;V. Gottschalch;H. Krautscheid;R. Schmidt‐Grund;M. Grundmann
本文报道了碘化亚铜（CuI）微丝中激光的观测结果。采用气相传输法生长了低缺陷浓度的CuI微丝。单根微丝的晶体结构被确定为闪锌矿型。单根微线的高光学质量由所观察到的激子发射线系列以及在光激发下形成的增益指示。本文研究了飞秒和纳秒激光在低温下单根微丝中三角形回音壁模的激光发射。时间分辨的显微光致发光研究揭示了几个皮秒的时间尺度上的激光过程的动力学。
We report on the observation of lasing in cuprous iodide (CuI) microwires. A vapor-phase transport growth procedure was used to synthesize CuI microwires with low defect concentration. The crystal structure of single microwires was determined to be of zincblende-type. The high optical quality of single microwires is indicated by the observed series of excitonic emission lines as well as by the formation of gain under optical excitation. Lasing of triangular whispering-gallery modes in single microwires is demonstrated for fs- and ns-excitation from cryogenic temperatures up to 200 K. Time-resolved micro-photoluminescence studies reveal the dynamics of the laser process on the time scale of several picoseconds.