Reactive magnetron sputtering of titanium and its oxides
Reactive magnetron sputtering of titanium and its oxides
复制标题
钛及其氧化物的反应磁控溅射
DOI：
10.1116/1.571613
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
L. Holland
中科院分区：
文献类型：
--
作者：
A. Nyaiesh;L. Holland
Ti和TiOx薄膜已分别通过真空和反应蒸发，使用电子束加热。然而，磁控溅射钛及其氧化物的兴趣，因为该系统的简单性和可能的应用在半导体和冶金工业。研究了平面磁控管的放电和沉积特性。使用水冷钛靶，在Ar和Ar+O2混合物中以高达1200 W的功率运行，获得的结果表明V/I曲线分为两组。因此，在低输入功率或高O2气体含量下需要高操作电压，这是高氧化膜生长的特征模式。高功率输入（即使在存在25%O2含量的情况下）或低O2含量导致低操作电压和基本上金属膜的生长。O2对放电特性的影响被简要地考虑。给出了不同混合气体的沉积速率随输入功率的变化曲线。
Ti and TiOx films have been made by vacuum and reactive evaporation, respectively, using electron beam heating. However, magnetron sputtering of Ti and its oxides is of interest because of the system’s simplicity and possible applications in the semiconductor and metallurgical industries. An investigation has been made into the discharge and deposition characteristics of a planar magnetron. Using a water‐cooled Ti target operated at up to 1200 W in Ar and Ar+O2 mixtures, the results obtained show that V/I curves fall into two groups. Thus a high operating voltage is needed at either a low input power or high O2‐gas content which is the characteristic mode for high oxidized film growth. High power inputs (even in the presence of a 25% O2 content) or low O2 content resulted in a low operating voltage and the growth of substantially metallic films. The effects of O2 on the discharge characteristic are briefly considered. Deposition rate curves as a function of power input for different gas mixtures are prese...