Schottky Barrier Height in Fe/GaAs Films
Schottky Barrier Height in Fe/GaAs Films
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DOI：
10.1109/tmag.2010.2045483
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发表时间：
2010-05
影响因子：
2.1
通讯作者：
L. Fleet;K. Yoshida;H. Kobayashi;Y. Ohno;H. Kurebayashi;J. Kim;C. Barnes;A. Hirohata
中科院分区：
文献类型：
--
作者：
L. Fleet;K. Yoshida;H. Kobayashi;Y. Ohno;H. Kurebayashi;J. Kim;C. Barnes;A. Hirohata
本文讨论了退火对Fe/GaAs薄膜界面结构的影响，以及退火后对肖特基势垒高度的影响。界面的图像表明，退火过程可以大大降低原子混合的水平。研究了Fe/GaAs肖特基势垒二极管在10-300 K的宽温度范围内的I-V特性，发现在未退火的情况下，由于混合表面态的存在，其I-V特性具有很强的温度依赖性。退火过程减少了界面态的存在，导致更理想的行为，降低了肖特基行为的温度依赖性。
We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2 × 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes, in a wide temperature range of 10-300 K, reveals a strong temperature dependence for the unannealed case, arising from the presence of mixed surface states. The annealing process reduces the existence of the interfacial states, leading to more ideal behavior, with a reduced temperature dependence of the Schottky behavior.