Intrasubband excitations and spin-splitting anisotropy in GaAs modulation-doped quantum wells.
Intrasubband excitations and spin-splitting anisotropy in GaAs modulation-doped quantum wells.
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DOI：
10.1103/physrevb.47.16028
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发表时间：
1993-06
期刊：
影响因子：
--
通讯作者：
Richards;Jusserand;Perić;Etienne
中科院分区：
文献类型：
--
作者：
Richards;Jusserand;Perić;Etienne
利用拉曼散射测量了n型调制掺杂GaAs/Al 0.33 Ga 0.67 As量子阱准二维电子气（2DEG）的子带内激发.在去极化谱中，我们观察到自旋分裂导带之间的自旋翻转单粒子激发。测量与拉曼波矢量沿着不同的晶体取向，使我们能够探测自旋分裂的各向异性，在GaAs中缺乏反转对称性所造成的。我们讨论了自旋分裂的理论描述在2DEG和比较计算和测量的拉曼光谱。在偏振光谱中，我们观察到非自旋翻转单粒子激发和等离子体激元的散射强度相当
We present Raman-scattering measurements of intrasubband excitations in the quasi-two-dimensional electron gas (2DEG) of an n-type modulation-doped GaAs/Al 0.33 Ga 0.67 As quantum well. In depolarized spectra we observe spin-flip single-particle excitations between the spin-split conduction bands. Measurements with the Raman wave vector along different crystallographic orientations allow us to probe the anisotropy of the spin splitting, caused by the lack of inversion symmetry in GaAs. We discuss theoretical descriptions of the spin splitting in a 2DEG and compare calculated and measured Raman spectra. In polarized spectra we observe scattering with comparable intensity from non-spin-flip single-particle excitations and plasmons