Analysis of temperature-dependent dark current transport mechanism for GaAs-based blocked-impurity-band (BIB) detectors
Analysis of temperature-dependent dark current transport mechanism for GaAs-based blocked-impurity-band (BIB) detectors
复制标题
GaAs 基阻挡杂质带 (BIB) 探测器的温度相关暗电流输运机制分析
DOI：
10.1007/s11082-019-1768-1
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发表时间：
2019
影响因子：
3
通讯作者：
Ming Pan
中科院分区：
文献类型：
--
作者：
Xiaodong Wang;Yulu Chen;Xiaoyao Chen;Bingbing Wang;Chuansheng Zhang;Haoxing Zhang;Ming Pan
分析了GaAs基阻塞杂质带探测器的暗电流输运机制。详细介绍了器件结构、工艺步骤和物理模型。在本工作中，通过对电子漂移电流的相关讨论，假设吸收层中的扩散电流和产生-复合电流作为暗电流的两个主要成分，可以等效为阻挡层中的电子漂移电流，从而大大简化了暗电流输运机制的分析。在证实了这一假设后，我们的讨论集中在为什么暗电流是一个单调增加的函数的工作温度为一个固定的阳极偏压。我们的研究结果表明，从暗电流抑制的角度来看，低施主掺杂水平和低工作温度是首选。
Temperature-dependent dark current transport mechanism has been analyzed for GaAs-based blocked-impurity-band detectors. Device structure, processing steps and physical models are described in detail. In this work, the analysis of dark current transport mechanism has been greatly simplified by electron drift current related discussion based on the assumption that the diffusion current and the generation–recombination current as two dominating components of dark current in the absorbing layer can be equivalent to the electron drift current in the blocking layer. After confirming this assumption, our discussion focuses on why dark current is a monotonically increasing function of operation temperature for a fixed anode bias. Our results reveal that from dark current suppression point of view, low donor doping level and low operation temperature are preferred.