Influence of Si doping on the performance of quantum dots-in-well photodetectors
Influence of Si doping on the performance of quantum dots-in-well photodetectors
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DOI：
10.1116/1.2190676
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发表时间：
2006-05-01
影响因子：
1.4
通讯作者：
Krishna, S.
中科院分区：
文献类型：
--
作者：
Attaluri, R. S.;Annamalai, S.;Krishna, S.
通过测量InAs/In0.15Ga0.85As量子点阱红外探测器的暗电流、光电流、光谱响应、响应率和探测率，研究了掺杂对量子点阱红外探测器性能的影响。暗电流作为点中的掺杂水平的函数单调增加。光电流也随着掺杂水平的增加而增加。通过对背景限制红外探测器温度的测量，我们发现这些探测器的最佳薄层掺杂浓度为n = 3 × 10~（10）cm~（2）（相当于约1e/dot）。这些结果证实了这些探测器的响应率和产生-复合噪声限制探测率的测量。(c)2006年美国真空学会。
The effects of doping on InAs/In0.15Ga0.85As quantum dots-in-well infrared photodetectors have been investigated by measuring the dark current, photocurrent, spectral response, responsivity, and detectivity. The dark current increased monotonically as a function of the doping level in the dots. The photocurrent too increased with the increase in the doping level. By measuring the background limited infrared photodetector temperature, we find that the optimum sheet doping concentration in these detectors is n = 3 x 10(10) cm(2) (corresponding to about le/dot). These results were corroborated by measurement of responsivity and generation-recombination noise limited detectivity of these detectors. (c) 2006 American Vacuum Society.