Low-temperature spin relaxation in n -type GaAs
Low-temperature spin relaxation in n -type GaAs
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DOI：
10.1103/physrevb.66.245204
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发表时间：
2002-08
影响因子：
3.7
通讯作者：
R. I. Dzhioev;K. Kavokin;V. L. Korenev;M. V. Lazarev;B. Meltser;M. Stepanova;B. P. Zakharchenya;
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文献类型：
--
作者：
R. I. Dzhioev;K. Kavokin;V. L. Korenev;M. V. Lazarev;B. Meltser;M. Stepanova;B. P. Zakharchenya;
Low-temperature electron-spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from ${10}^{14}{\mathrm{cm}}^{\ensuremath{-}3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\ensuremath{-}3}.$ A peculiarity related to the metal-to-insulator transition is observed in the dependence of the spin lifetime on doping near ${n}_{D}=2\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm{cm}}^{\ensuremath{-}3}.$ In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction
Low-temperature electron-spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from ${10}^{14}{\mathrm{cm}}^{\ensuremath{-}3}$ to $5\ifmmode\times\else\texttimes\fi{}{10}^{17}{\mathrm{cm}}^{\ensuremath{-}3}.$ A peculiarity related to the metal-to-insulator transition is observed in the dependence of the spin lifetime on doping near ${n}_{D}=2\ifmmode\times\else\texttimes\fi{}{10}^{16}{\mathrm{cm}}^{\ensuremath{-}3}.$ In the metallic phase, spin relaxation is governed by the Dyakonov-Perel mechanism, while in the insulator phase it is due to anisotropic exchange interaction and hyperfine interaction