High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film
High performance solar-blind UV detector based on Hf0.38Sn0.62O2 epitaxial film
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基于Hf0.38Sn0.62O2外延膜的高性能日盲紫外探测器
DOI：
10.1063/5.0005674
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发表时间：
2020
影响因子：
4
通讯作者：
He Yunbin
中科院分区：
文献类型：
--
作者：
Cheng Yang;Li Mingkai;Wang Qile;Zhang Teng;Meng Dongxue;Lu Yinmei;He Yunbin
在这项工作中，高品质的SnO 2和Hf0.38Sn0.62O2薄膜生长在c面蓝宝石衬底上的脉冲激光沉积进行比较研究。光学和电学测试表明，Hf掺杂导致显着增加的HfSnO 2合金的带隙和电阻率相比，SnO 2。然后，SnO 2和Hf0.38Sn0.62O2基紫外探测器的制作和比较。Hf0.38Sn0.62O2薄膜探测器具有优异的性能。其暗电流在20 V下低至0.2 pA，上升/衰减响应时间短至69 ms/50 ms。截止波长为290 nm，抑制比为4100。我们的工作表明，Hf0.38Sn0.62O2三元合金化合物半导体在日盲紫外探测方面具有很大的应用潜力。
In this work, high-quality SnO2 and Hf0.38Sn0.62O2 thin films were grown on c-plane sapphire substrates by pulsed laser deposition for a comparative study. The optical and electrical tests show that Hf doping leads to significantly increased bandgap and resistivity of the HfSnO2 alloy as compared to SnO2. Then, SnO2- and Hf0.38Sn0.62O2-based UV detectors were fabricated and compared. The Hf0.38Sn0.62O2 film-based detector exhibits an excellent performance. Its dark current is as low as 0.2 pA under 20 V, and the rise/decay response time is as short as 69 ms/50 ms. The cut-off wavelength and the rejection ratio are 290 nm and 4100, respectively. Our work demonstrates that the Hf0.38Sn0.62O2 ternary alloy compound semiconductor has great potential for applications in solar-blind ultraviolet detections.