Effect of gas pressure on reactive pulsed laser ablation of a silicon target
Effect of gas pressure on reactive pulsed laser ablation of a silicon target
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气压对硅靶反应脉冲激光烧蚀的影响
DOI：
10.1116/1.1527898
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
A. Sugimura
中科院分区：
文献类型：
--
作者：
M. Inada;I. Umezu;A. Sugimura
通过反应性脉冲激光烧蚀硅靶在氢气或氮气中制备氢化硅和氮化硅薄膜。研究了气体压力与沉积形态或结合形态之间的关系。当氢气压力为30 Pa，氮气压力为20 Pa时，随着气体压力的增加，表面形貌突然由薄膜变为纳米颗粒。在氢气和氮气中，Si-H和Si-N键的含量分别在50 Pa和5 Pa时达到最大值。讨论了气体类型对纳米颗粒形成及硅与环境气体反应的影响。
Hydrogenated silicon and silicon nitride films are synthesized by reactive pulsed laser ablation of a silicon target in hydrogen or nitrogen gas. A correlation between gas pressure and morphology or bonding configuration of deposits was investigated. With increasing gas pressure, the surface morphology abruptly changed from film to an assembly of nanoparticles at 30 Pa in hydrogen and 20 Pa in nitrogen gas. The content of Si–H and Si–N bonds in the deposits was maximized at 50 and 5 Pa in hydrogen and nitrogen gas, respectively. The influence of gas type on nanoparticle formation and reaction between silicon and ambient gas are discussed.