NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE
NANOSCALE PATTERNING AND OXIDATION OF H-PASSIVATED SI(100)-2X1 SURFACES WITH AN ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPE
复制标题
DOI：
10.1063/1.111722
复制
发表时间：
1994-04-11
影响因子：
4
通讯作者：
ABELN, GC
中科院分区：
文献类型：
--
作者：
LYDING, JW;SHEN, TC;ABELN, GC
用双极真空扫描隧道显微镜实现了氢封端的Si（100）-2x1表面的纳米尺度图案化。当从探针发射的电子场局部解吸氢时，图案化发生，将表面转化为清洁的硅。通过这种技术，在3 nm间距上实现了1 nm的线宽。局部化学也通过图案化区域的选择性氧化来证明。在氧化过程中，线宽被保存和周围的H-钝化区保持不受影响，表明这种技术在多步光刻工艺的潜在用途。
Nanoscale patterning of the hydrogen terminated Si(100)-2x1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope. Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H-passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.