Production and recovery of defects in SiC after irradiation and deformation
Production and recovery of defects in SiC after irradiation and deformation
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DOI：
10.1016/s0022-3115(98)00139-1
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发表时间：
1998-10-01
影响因子：
3.1
通讯作者：
Klein, H
中科院分区：
文献类型：
--
作者：
Chen, J;Jung, P;Klein, H
测量了氦离子注入SiC和SiC/C复合材料的体积变化以及SiC的电阻率随氦离子注入和退火过程的变化。与质子辐照的比较表明，位移缺陷是造成损伤的原因，而注入的氦原子起次要作用。晶格膨胀和电阻率表现出相当不同的恢复行为，而注入后的膨胀退火和抛光变形后的退火是惊人的相似。从缺陷动力学和反应的角度对恢复进行了初步的解释。(C)1998 Elsevier Science B. V.保留所有权利。
Changes of volume of thin silicon carbide specimens and a SiC/C composite and electrical resistivity of SiC were measured under helium implantation and during subsequent annealing. Comparison to proton irradiation shows that displacement defects are responsible for damage, while the implanted helium atoms play a minor role. Lattice dilatation and resistivity show rather different recovery behaviour, while annealing of dilatation after implantation and after deformation by polishing are amazingly similar. A tentative explanation of the recovery in terms of defect kinetics and reactions is given. (C) 1998 Elsevier Science B.V. All rights reserved.