Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior.
Si/SnSe-Nanorod Heterojunction with Ultrafast Infrared Detection Enabled by Manipulating Photo-Induced Thermoelectric Behavior.
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DOI：
10.1021/acsami.2c02557
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发表时间：
2022-05
影响因子：
9.5
通讯作者：
Yingmin Liu;Yunjie Liu;Yupeng Wu;Shirong Zhao;Fuhai Guo;Siqi Li;Weizhuo Yu;Guanchu Liu;Jingyi Hao;Zegao Wang;Keyou Yan;L. Hao
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文献类型：
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作者：
Yingmin Liu;Yunjie Liu;Yupeng Wu;Shirong Zhao;Fuhai Guo;Siqi Li;Weizhuo Yu;Guanchu Liu;Jingyi Hao;Zegao Wang;Keyou Yan;L. Hao
光热探测器在非制冷红外成像技术中引起了极大的研究兴趣，但其响应相对较慢。在这里，Si/SnSe-NR异质结被制造为光热探测器，以实现超出带隙限制的高性能红外响应。垂直站立的SnSe-NR阵列通过溅射方法沉积在Si上。通过控制Si/SnSe-NRs异质结沿着c轴方向的光生热电效应，在1342 nm光照下，该异质结具有四阶光响应，光响应率为106.3 V W-1，光探测率为1.9 × 1010 cm Hz 1/2 W-1.最重要的是，实现了超快的红外光热响应，上升/下降时间为11.3/258.7 μs。此外，PTE行为和外部热激发之间的耦合效应使响应提高了288.4%。这项工作不仅为开发高速光热探测器提供了一种新的策略，而且对异质结系统中的PTE行为进行了深入的理解。
Photothermal detectors have attracted tremendous research interest in uncooled infrared imaging technology but with a relatively slow response. Here, Si/SnSe-nanorod (Si/SnSe-NR) heterojunctions are fabricated as a photothermal detector to realize high-performance infrared response beyond the bandgap limitation. Vertically standing SnSe-NR arrays are deposited on Si by a sputtering method. Through manipulating the photoinduced thermoelectric (PTE) behavior along the c-axis, the Si/SnSe-NRs heterojunction exhibits a unique four-stage photoresponse with a high photoresponsivity of 106.3 V W-1 and high optical detectivity of 1.9 × 1010 cm Hz1/2 W-1 under 1342 nm illumination. Importantly, an ultrafast infrared photothermal response is achieved with the rise/fall time of 11.3/258.7 μs. Moreover, the coupling effect between the PTE behavior and external thermal excitation enables an improved response by 288.4%. The work not only offers a new strategy to develop high-speed photothermal detectors but also performs a deep understanding of the PTE behavior in a heterojunction system.