Effective kinetic variations with stress duration for multilayered metallizations
Effective kinetic variations with stress duration for multilayered metallizations
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多层金属化的有效动力学随应力持续时间的变化
DOI:
10.1109/relphy.1988.23447
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发表时间:
1988
期刊:
影响因子:
--
通讯作者:
J. McPherson
中科院分区:
文献类型:
--
作者:
J. Ondrusek;A. Nishimura;H. Hoang;T. Sugiura;R. Blumenthal;H. Kitagawa;J. McPherson
Electromigration (EM) in Ti:W/Al-1%Si two-layered and Ti/W/Al-1%Si three-layered metallizations was investigated. The activation energy and the EM performance were studied as functions of the change in resistance which results from EM damage. The effective activation energy was found to decrease monotonically with increasing test structure resistance under stress. The temperature coefficient of resistance supports a void formation model in the Al-Si layer as the resistance rise mechanism for the Ti:W/Al-Si multilayered film. An empirical form of the Black equation which incorporates resistance rise is proposed.<<ETX>>