Advanced CMOS technology portfolio for RF IC applications
Advanced CMOS technology portfolio for RF IC applications
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适用于 RF IC 应用的先进 CMOS 技术组合
DOI：
10.1109/ted.2005.850631
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发表时间：
2005
影响因子：
3.1
通讯作者：
J. Sun
中科院分区：
文献类型：
--
作者：
Chih;Chih;J. Chern;J. Sun
介绍了一种适用于各种RF IC应用的高质量90 nm CMOS工艺组合。该产品组合由多种有源和无源元件以及用户友好的工艺设计套件（PDK）组成。详细研究了布局优化的RF元件，包括具有120-160 GHz f/sub T/和极低噪声系数的最先进的90 nm RFMOS器件，在品质因数和调谐比之间进行权衡的变容二极管，采用金属-绝缘体-金属和金属-金属方案的精密电容，以及适合不同RF设计的各种电感器结构。比较了几种布局方案对隔离基片射频噪声的有效性。最后讨论了构造有用的PDK的准则和要求。
A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz f/sub T/ and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.