Reversible and Reproducible Conductance Transition in a Polyimide Thin Film
Reversible and Reproducible Conductance Transition in a Polyimide Thin Film
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聚酰亚胺薄膜中可逆且可重复的电导转变
DOI：
10.1021/jp806276r
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发表时间：
2008-11-06
影响因子：
3.7
通讯作者：
Gao, Hong-jun
中科院分区：
文献类型：
--
作者：
Cai, Li;Feng, Min;Gao, Hong-jun
利用扫描隧道显微镜(STM)在Au(111)衬底上制备的聚酰亚胺(PI)Langmuir-Blodgett薄膜实现了可逆的、可重复的电导转变。使用STM光刻方法，通过施加大约-2.7V的电压脉冲，可以诱导出高电导状态。在正常的STM扫描条件下，PI单层可以自发地恢复到其原始的低电导状态。P1分子中的电子捕获/脱陷过程可能是其电导跃迁的原因。聚酰亚胺薄膜具有可逆性和高重复性的电导开关特性，在分子逻辑和存储器件中具有潜在的应用前景。
A reversible and reproducible conductance transition is realized in the monolayer of polyimide (PI) Langmuir-Blodgett film on Au (111) substrate with a scanning tunneling microscopy (STM). The high-conductance state can be induced by applying a voltage pulse of about -2.7 V using the STM lithography method. The PI monolayer can spontaneously recover to its original low conductance state under a normal STM scanning condition. An electron trapping/detrapping process in the P1 molecule can be responsible for its conductance transition. The reversible and highly reproducible conductance switching behavior in the PI film could provide its potential applications in the molecular logic and memory devices.