Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition
Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition
复制标题
脉冲金属有机化学气相沉积低温外延级多晶Pb(Zr,Ti)O3薄膜
DOI：
10.1063/1.1391229
复制
发表时间：
2001
影响因子：
4
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
M. Aratani;T. Oikawa;T. Ozeki;H. Funakubo
采用源气体脉冲引入金属有机化学气相沉积方法，在415 °C的温度下制备了外延级多晶PZT薄膜。在(111)Pt/Ti/SiO_2/Si衬底上制备的多晶PZT薄膜具有高度的(100)择优取向和(001)择优取向。获得了剩余极化(Pr)为41.4μC/cm~2、矫顽场为78.5kV/cm的饱和铁电性。考虑到(10 0)和(0 0 1)取向的体积分数，这个Pr值与在5 80 °C下相同成分和取向的外延生长的薄膜的Pr值几乎相同。
Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 (PZT) films were deposited at 415 °C by source- gas-pulsed-introduced metalorganic chemical vapor deposition. The polycrystalline PZT film with Zr/(Zr+Ti)=0.35 which was prepared on (111)Pt/Ti/SiO2/Si substrate showed highly (100)- and (001)-preferred orientations. Well-saturated ferroelectricity with a remanent polarization (Pr) and coercive field of 41.4 μC/cm2 and 78.5 kV/cm, respectively, was obtained. This Pr value is almost the same as that of epitaxially grown films at 580 °C with the same composition and orientations taking into account of the volume fraction of (100) and (001) orientations.