Ionized Cluster Beam Deposition of Polycrystalline Thin Films of CuInSe2

Ionized Cluster Beam Deposition of Polycrystalline Thin Films of CuInSe2
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CuInSe2 多晶薄膜的电离簇束沉积

DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
Katsuaki Sato Katsuaki Sato
Katsuaki Sato Katsuaki Sato
中科院分区：
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文献类型：
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作者：
S. Matsuda;Y. Kudo;T. Ushiki;Hiroki Inoue Hiroki Inoue;Katsuaki Sato Katsuaki Sato

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采用三源离子团束（ICB）沉积法在裸玻璃和镀钼玻璃衬底上制备了CuInSe2薄膜。在构成CuInSe 2的三种元素中，只有In被电离和加速。单相黄铜矿薄膜中得到的薄膜在加速电压高于1千伏。发现Cu/In比以及电阻率可以通过改变加速电压来控制。X射线衍射、光学显微镜和扫描电子显微镜分析表明，加速电压的施加提高了CuInSe2晶粒的结晶度和均匀性。这种改善在钼涂层衬底上生长的薄膜中更为明显。
Thin films of CuInSe2 were prepared by three-source ionized cluster beam (ICB) deposition on bare and Mo-coated glass substrates. Of the three elements composing CuInSe2, only In was ionized and accelerated. Single-phase chalcopyrite films were obtained in films prepared at acceleration voltages higher than 1 kV. The Cu/In ratio, as well as the electrical resistivity, was found to be controlled by changing the acceleration voltage. X-ray diffraction patterns, optical micrographs and scanning electron micrographs revealed that the crystallinity and the homogeneity of CuInSe2 grains were improved by application of acceleration voltages. The improvement was more obvious in the films grown on Mo-coated substrates.