Trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions
Trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions
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DOI：
10.1088/0031-8949/2009/t138/014050
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发表时间：
2009-12
期刊：
影响因子：
2.9
通讯作者：
Makoto Kobayashi;Sachiko Suzuki;Wanjing Wang;Rie Kurata;K. Kida;N. Ashikawa;A. Sagara;N. Yoshida;Y. Oya;K. Okuno
中科院分区：
文献类型：
--
作者：
Makoto Kobayashi;Sachiko Suzuki;Wanjing Wang;Rie Kurata;K. Kida;N. Ashikawa;A. Sagara;N. Yoshida;Y. Oya;K. Okuno
利用热解吸光谱（TDS）和x射线光电子能谱（XPS）研究了氘离子与碳离子同时注入钨中的俘获行为。D2 TDS谱包括三个解吸阶段，即被本征缺陷捕获的氘、离子诱导缺陷和碳随着C-D键的形成而解吸。虽然本征缺陷捕获的氘保留几乎是恒定的，但离子诱导缺陷捕获的氘保留随着离子影响的增加而增加。在0.5×1022 D+ m-2离子作用下，C-D键形成的氘潴留达到饱和状态，主要过程由钨溅射形成W-C混合物转变为C-C层的形成，C-D键形成的氘潴留减少。结果表明，C - C层会促进碳与氘的化学溅射，并形成CDx，碳的化学状态会控制C+ -D2 +注入下钨中的氘潴留。
The trapping behaviour of deuterium ions implanted into tungsten simultaneously with carbon ions was investigated by thermal desorption spectroscopy (TDS) and x-ray photoelectron spectroscopy (XPS). The D2 TDS spectrum consisted of three desorption stages, namely desorption of deuterium trapped by intrinsic defects, ion-induced defects and carbon with the formation of the C–D bond. Although the deuterium retention trapped by intrinsic defects was almost constant, that by ion-induced defects increased as the ion fluence increased. The retention of deuterium with the formation of the C–D bond was saturated at an ion fluence of 0.5×1022 D+ m–2, where the major process was changed from the sputtering of tungsten with the formation of a W–C mixture to the formation of a C–C layer, and deuterium retention as the C–D bond decreased. It was concluded that the C–C layer would enhance the chemical sputtering of carbon with deuterium with the formation of CDx and the chemical state of carbon would control the deuterium retention in tungsten under C+–D2+ implantation.