Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy
Mapping of Bernal and non-Bernal stacking domains in bilayer graphene using infrared nanoscopy
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DOI：
10.1039/c7nr00713b
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发表时间：
2017-03-28
期刊：
影响因子：
6.7
通讯作者：
Kim, Zee Hwan
中科院分区：
文献类型：
--
作者：
Jeong, Gyouil;Choi, Boogeon;Kim, Zee Hwan
双层石墨烯（BLG）作为光电器件的一种新材料，由于其带隙可以通过改变堆叠顺序和施加外电场来控制，因此显示出巨大的潜力。一种能够可视化和表征BLG中各种堆叠域的成像技术将有助于充分利用BLG的这些特性。本文证明了红外（IR）散射型扫描近场光学显微镜（sSNOM）可以基于堆叠特异性带间和带内的光学电导率来可视化BLG的Bernal和非Bernal堆叠域。该方法能够在介质衬底上对BLG中的堆叠域进行纳米映射，增强了拉曼光谱和电子显微镜技术对BLG结构表征的电流限制。
Bilayer graphene (BLG) shows great potential as a new material for opto-electronic devices because its bandgap can be controlled by varying the stacking orders, as well as by applying an external electric field. An imaging technique that can visualize and characterize various stacking domains in BLG may greatly help in fully utilizing such properties of BLG. Here we demonstrate that infrared (IR) scattering-type scanning near-field optical microscopy (sSNOM) can visualize Bernal and non-Bernal stacking domains of BLG, based on the stacking-specific inter-and intra-band optical conductivities. The method enables nanometric mapping of stacking domains in BLG on dielectric substrates, augmenting current limitations of Raman spectroscopy and electron microscopy techniques for the structural characterization of BLG.