Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)
Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)
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DOI：
10.1063/1.1756213
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发表时间：
2004-07-01
影响因子：
3.2
通讯作者：
Matsunami, H
中科院分区：
文献类型：
--
作者：
Negoro, Y;Katsumoto, K;Matsunami, H
研究了高剂量磷离子（P+）注入4H-SiC（0001）并进行高温退火。石墨帽退火在很大程度上抑制了注入SiC的表面粗化。用x射线光电子能谱分析了注入SiC的表面化学计量。基于霍尔效应测量，讨论了P+注入SiC的电子行为。带石墨帽和不带石墨帽退火的SiC片电阻无显著差异。在植入剂量为6 × 10(16) cm（-2）时，片电阻（电阻率）最小值为45 ω /平方（0.9 mOmegacm）。薄片电阻表现出较弱的温度依赖性。(C) 2004年美国物理研究所。
High-dose phosphorus-ion (P+) implantation into 4H-SiC (0001) followed by high-temperature annealing has been investigated. Annealing with a graphite cap largely suppressed the surface roughening of implanted SiC. The surface stoichiometry of implanted SiC was examined by x-ray photoelectron spectroscopy. Electronic behaviors of P+-implanted SiC are discussed based on Hall effect measurements. There is no significant difference in the sheet resistance between SiC annealed with a graphite cap and without a graphite cap. The sheet resistance (resistivity) takes a minimum value of 45 Omega/square (0.9 mOmegacm) at an implant dose of 6.0x10(16) cm(-2). The sheet resistance shows a weak temperature dependence. (C) 2004 American Institute of Physics.