On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates
On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates
复制标题
绝缘体上硅衬底上点接触技术的有效迁移率提取
DOI：
10.1063/1.4906123
复制
发表时间：
2015
影响因子：
3.2
通讯作者：
F. Allibert
中科院分区：
文献类型：
--
作者：
C. Fernandez;N. Rodriguez;C. Márquez;A. Ohata;F. Allibert
在本研究中，我们介绍了裸露绝缘体上硅衬底的迁移率与有效电场的关系。确定了决定硅膜有效场的关键因素，并建立了模型。这一表述阐明了在钝化和非钝化晶圆中观察到的载流子迁移率差异的起源。在低有效电场下，揭示了由顶界面决定的库仑散射的作用和硅膜厚度的影响。比较了两点接触和四点接触表征技术；当使用两点伪mosfet配置而不校准电流形状因子时，需要谨慎，因为它可能导致迁移率值的低估。然而，当有效电场和电流形状因子被准确地评估时，我们报告了在高有效电场下，无论表面是否钝化，硅膜的载流子迁移率都符合通用迁移率…
In this work, we introduce the mobility vs. effective electric field representation for bare silicon-on-insulator substrates. The key factors determining the effective field in the silicon film are identified and modeled. This representation sheds light on the origins of the carrier mobility differences observed in passivated and non-passivated wafers. At low effective electric field, the roles of the Coulomb scattering, determined by the top-interface, and the impact of the silicon film thickness are clearly disclosed. Two and four point-contact characterization techniques are compared; caution is called when the two point Pseudo-MOSFET configuration is used without calibration of the current form factor, since it may lead to an underestimation of the mobility values. Nevertheless, when the effective field and current form factors are evaluated accurately, we report that the carrier mobility of the silicon film at high effective electric field, with passivated surface or not, obeys the Universal Mobility...