Influence of Counter-Layer Deposition Condition on Critical Current Spread in Interface-Modified Ramp-Edge Junction Arrays
Influence of Counter-Layer Deposition Condition on Critical Current Spread in Interface-Modified Ramp-Edge Junction Arrays
复制标题
对层沉积条件对界面改进斜坡边缘结阵列中临界电流分布的影响
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
K. Tanabe
中科院分区：
文献类型：
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作者：
H. Wakana;S. Adachi;M. Horibe;Y. Ishimaru;O. Horibe;Y. Tarutani;K. Tanabe
我们利用脉冲激光沉积（PLD）分别制备了以溅射掺la的YBa2Cu3Oy （La-YBCO）和掺la的YbBa2Cu3Oy （La-YbBCO）为基底层和对抗层的界面修饰斜坡边结和结阵列。研究了La-YbBCO计数器层的沉积条件，特别是靶-衬底距离（Ht-s）对结性能和结阵列中Ic扩散的影响。在相对较短的60 mm高温下，不同边缘方向结的Ic值存在显著差异，表明势垒再结晶受烧蚀原子入射角的显著影响。通过采用更长的80 mm的Ht-s，可以减小这种影响，并且对于100结和1000结串联阵列，在4.2 K下Ic中的1 σ扩展分别为7.9和9.5%。
We have fabricated interface-modified ramp-edge junctions and junction arrays with sputtered La-doped YBa2Cu3Oy (La-YBCO) and La-doped YbBa2Cu3Oy (La-YbBCO) by pulsed laser deposition (PLD) as base and counter layers, respectively. The influences of deposition conditions for the La-YbBCO counter layers, in particular the target–substrate distance (Ht–s), on the junction properties and the Ic spread in the junction arrays is investigated. For a relatively short Ht–s of 60 mm, junctions with different edge directions exhibit substantially different Ic values, suggesting that the barrier recrystallization is significantly influenced by the incident angle of ablated atoms on the ramp surface. By employing a longer Ht–s of 80 mm, this influence can be lessened, and 1 σ spreads in Ic at 4.2 K of 7.9 and 9.5% can be obtained for 100- and 1000-junction series arrays, respectively.