Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure
Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure
复制标题
双栅结构硅金属氧化物半导体场效应晶体管反型层的库仑阻塞
DOI：
10.1063/1.111085
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发表时间：
1994
影响因子：
4
通讯作者：
E. Takeda
中科院分区：
文献类型：
--
作者：
H. Matsuoka;T. Ichiguchi;T. Yoshimura;E. Takeda
我们研究了具有双栅结构的Si金属氧化物半导体场效应晶体管中人工可压缩反型层的输运性质。沿着一维通道以恒定间隔沿着增加势垒高度逐渐将简单量子线转变为耦合量子点。在低温下改变隧道势垒高度，可以观察到输运性质的明显变化。实验结果进行了讨论的一维子带和单电子隧穿的库仑阻塞。
We have studied the transport properties of artificially squeezable inversion layers in a Si metal‐oxide‐semiconductor field‐effect‐transistor with a dual‐gate structure. Increasing the potential barrier height with constant intervals along the one‐dimensional channel gradually transforms a simple quantum wire into coupled quantum dots. The clear change in transport properties has been observed by changing the tunnel barrier height at low temperatures. The experimental results are discussed in terms of one‐dimensional subbands and the Coulomb blockade of single‐electron tunneling.