Electrically tuning near-field heat flux using metal–oxide–semiconductor structure considering gradient dielectric function distribution
Electrically tuning near-field heat flux using metal–oxide–semiconductor structure considering gradient dielectric function distribution
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DOI：
10.1063/5.0123623
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发表时间：
2022-10
影响因子：
4
通讯作者：
Deyu Xu;Junming Zhao;Linhua Liu
中科院分区：
文献类型：
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作者：
Deyu Xu;Junming Zhao;Linhua Liu
利用金属氧化物半导体结构，考虑介电函数的梯度分布，建立了近场热流密度与偏置电压的关系模型。建立了两种偏置金属氧化物半导体结构交换的近场热流密度与偏置电压的定量关系。确定了由偏压引起的半导体层中载流子密度的分布和所产生的介电函数。利用有效的多层模型计算了相应的近场热流密度。这是由于注入或引出主要载流子引起的高频表面极化子态的增加或减少所致。这项工作加深了对金属-氧化物-半导体结构近场换热的电气控制的理解，有望用于纳米级的热管理器件和热电路。
We build a model to determine the dependency of near-field heat flux on bias voltage using the metal–oxide–semiconductor structures considering gradient distribution of dielectric function. Quantitative dependency of near-field heat flux exchanged by two biased metal–oxide–semiconductor structures on bias voltage is established. The distribution of carrier density and the resultant dielectric function in the semiconductor layer caused by the bias are determined. The corresponding near-field heat flux is calculated using an effective multilayer model. Significant tuning performance is demonstrated, which is due to the increase or decrease in high-frequency surface polariton states induced by the injection or extraction of major carriers. This work deepens the understanding of electrical control of near-field heat transfer with metal–oxide–semiconductor structures, promising for nanoscale thermal management devices and thermal circuits.