Characterisation of 10 kV 10 A SiC MOSFET
Characterisation of 10 kV 10 A SiC MOSFET
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10 kV 10 A SiC MOSFET 的表征
DOI：
10.1109/optim.2015.7427016
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
S. Munk‐Nielsen
中科院分区：
文献类型：
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作者：
E. Eni;Bogdan Ioan Incau;T. Kerekes;R. Teodorescu;S. Munk‐Nielsen
本文的目的是对10KV10A4H-SiCMOSFET的高温静态和动态性能进行表征和评估。结果表明，该器件具有良好的高温工作特性。双脉冲测试结果显示了在高温下有趣的行为，在开启时开关速度变得更快，从而使开启损耗变小，而在关闭时则相反。
The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.