Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor
Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor
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低压射频感应加热化学气相沉积反应器中热解四甲基硅烷在Si上生长3C-SiC的动力学研究
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
Hun‐Soo Byun
中科院分区：
文献类型：
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作者：
Kwang Chul Kim;K. Nahm;Y. Hahn;Y. Lee;Hun‐Soo Byun
在低压射频感应加热化学气相沉积反应器中，采用四甲基硅烷[TMS，（CH 3）4Si]在Si（111）衬底上生长了3C-SiC单晶薄膜。3C-SiC薄膜的生长速率随着TMS流量和生长温度的增加而增加。通过对3C-SiC薄膜生长速率实验数据的分析，确定了3C-SiC薄膜的生长动力学。3C-SiC薄膜的生长反应为一级反应。反应速率控制步骤从1100-1250 °C温度范围内的表面反应转变为1250 °C以上更高温度下的反应性气体扩散。 活化能为72.2千卡/分钟的表面反应控制步骤和38.2千卡/分钟的扩散控制步骤。在生长温度下，TMS解离成氢、Si原子和烃类气体，例如CH 3-CH 4、CH 4、C2 H2和C2 H4。结果表明，3C-SiC生长的有效反应物种是气态Si原子。
Single crystal 3C-SiC films were grown on Si(111) substrate using tetramethylsilane [TMS,(CH3)4Si] in a low pressure radio frequency-induction heated chemical vapor deposition reactor. The growth rate of 3C-SiC film increased with increasing TMS flow rate and growth temperature. The growth kinetics of 3C-SiC film was determined by analyzing the experimental data on the growth rate. The growth reaction of 3C-SiC film was the first order of TMS partial pressure in the reactor. The reaction rate controlling step changed from the surface reaction in the temperature range of 1100–1250 °C to the diffusion of reactive gases at higher temperatures above 1250 °C. The activation energies were 72.2 kcal/min for the surface reaction-controlling step and 38.2 kcal/min for the diffusion-controlling step. At the growth temperatures, TMS was dissociated into hydrogen, Si atoms, and hydrocarbon gases such as CH3⋅, CH4, C2H2, and C2H4. The effective reactive species for the growth of 3C-SiC turned out to be gaseous Si atom...