Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
Formation and Characterization of GaAs Quantum Wires at Giant Step Edges on Vicinal (110) GaAs Surfaces
复制标题
邻 (110) GaAs 表面巨台阶边缘 GaAs 量子线的形成和表征
DOI：
10.1143/jjap.34.4411
复制
发表时间：
1995
影响因子：
1.5
通讯作者：
H. Nakashima
中科院分区：
文献类型：
--
作者：
M. Takeuchi;K. Shiba;Kazuki Sato;H. Huang;Koichi Inoue;H. Nakashima
本文报道了利用分子束外延AlGaAs在邻位（110）GaAs表面上形成的巨台阶结构来形成GaAs量子线。原子力显微镜观察表明，台阶延伸到几微米以上，并且是相干排列的。在巨台阶结构上生长AlGaAs/GaAs量子阱（QWL）形成沿着台阶边缘的量子线（QWR）。载流子限制到QWR是由阱宽的增加（阱宽调制）和AlGaAs势垒中Al组分的减少（势垒组分调制）引起的，这是通过透射电子显微镜观察证实的。光致发光光谱中平行于线方向的红移和强偏振支持载流子限制到GaAs QWR中。
We report the formation of GaAs quantum wires using giant step structure formed during molecular beam epitaxial growth of AlGaAs on vicinal (110) GaAs surfaces. Atomic force microscope observation indicates that the steps extend to over several µm and are coherently aligned. The growth of an AlGaAs/GaAs quantum well (QWL) on the giant step structure forms quantum wires (QWRs) along the step edges. Carrier confinement into the QWRs is caused by the increase of well width (well-width modulation) and the decrease of Al composition in the AlGaAs barriers (barrier-compositional modulation), which are confirmed by transmission electron microscope observation. Redshift and strong polarization parallel to the wire direction in the photoluminescence spectra support carrier confinement into the GaAs QWRs.