Increase in Impurity in Single Bunch Mode of UVSOR Storage Ring

Increase in Impurity in Single Bunch Mode of UVSOR Storage Ring
复制标题

UVSOR存储环单束模式杂质增加

DOI：
10.1143/jjap.28.541
复制
发表时间：
1989
期刊：
影响因子：
--
通讯作者：
T. Kinoshita
T. Kinoshita
中科院分区：
--
文献类型：
--
作者：
T. Kasuga;H. Yonehara;M. Hasumoto;T. Kinoshita

文献摘要

被引文献

相似文献

在UVSOR储存环的单束团模式中观察到杂质的增加。在电子束注入之后，在单聚束之后的RF桶中的电子随着时间而增加。这种现象是由于电子被Touschek效应抛出桶外，由于辐射阻尼，被随后的桶再次捕获。定性解释是令人满意的，定量估计的杂质增加率是合理的。
An increase in impurity was observed in the single bunch mode of the UVSOR storage ring. Electrons in RF buckets following the single bunch increase with time after the electron beam injection. This phenomenon is caused by electrons thrown out of the bucket by the Touschek effect being captured again by following buckets due to radiation damping. The qualitative explanation is satisfactory and the quantitative estimation of the rate of the impurity increase is reasonable.