Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz
Broadband Terahertz Power Detectors Based on 90-nm Silicon CMOS Transistors With Flat Responsivity Up to 2.2 THz
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DOI：
10.1109/led.2018.2859300
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发表时间：
2018-09-01
影响因子：
4.9
通讯作者：
Roskos, Hartmut G.
中科院分区：
文献类型：
--
作者：
Ikamas, Kestutis;Cibiraite, Dovile;Roskos, Hartmut G.
我们提出了宽带高灵敏度太赫兹（THz）探测器的90 nm CMOS工艺的基础上，与最先进的性能。这些器件基于蝴蝶结和对数螺旋天线耦合场效应晶体管（FET），用于检测自由空间THz辐射（TeraFET）。我们报告优化的性能，这是通过采用内部开发的基于物理的模型在探测器设计和THz照明下的彻底设备表征。所实现的探测器与蝴蝶结天线的设计表现出一个几乎平坦的频率响应特性高达2.2太赫兹的光学响应度为45 mA/W（或220 V/W）。我们已经确定了一个最小的光学噪声等效功率低至48 pW/根赫兹在0.6太赫兹和70 pW/根赫兹在1.5太赫兹。在1.5 THz下获得的结果优于文献中报道的该频率下的最佳窄带TeraFET，并且仅比0.6 THz下的最佳窄带器件差四倍。
We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with the state-of-the-art performance. The devices are based on bow-tie and log-spiral antenna-coupled field-effect transistors (FETs) for the detection of free-space THz radiation (TeraFETs). We report on optimized performance, which was achieved by employing an in-house developed physics-based model during detector design and thorough device characterization under THz illumination. The implemented detector with bow-tie antenna design exhibits a nearly flat frequency response characteristic up to 2.2 THz with an optical responsivity of 45 mA/W (or 220 V/W). We have determined a minimum optical noise-equivalent power as low as 48 pW/root Hz at 0.6 THz and 70 pW/root Hz at 1.5 THz. The results obtained at 1.5 THz are better than the best narrowband TeraFETs reported in the literature at this frequency and only up to a factor of four inferior to the best narrowband devices at 0.6 THz.