Controlled deposition of density defects for understanding mechanical reduction on 2D C/SiC composites

Controlled deposition of density defects for understanding mechanical reduction on 2D C/SiC composites
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密度缺陷的受控沉积,用于了解 2D C/SiC 复合材料的机械还原

DOI:
10.1016/j.compositesb.2018.10.085
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发表时间:
2019-03
期刊:
Composites Part B: Engineering
影响因子:
--
通讯作者:
Cheng Laifei
Cheng Laifei
中科院分区:
其他
文献类型:
--
作者:
Mei Hui;Liang Chengyu;Zhang Ding;Chen Chao;Cheng Laifei

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连续碳纤维增强碳化硅基复合材料(C/SiCs)因具有优良的高温性能和较小的结构重量而在航空航天领域得到了广泛的应用。然而,具有随机性和不可预测性的密度缺陷(DD)会严重影响层压C/SiC复合材料(2DC/SiC)的力学性能。提出了一种新的方法,即在研磨好的C/SiC复合材料板表面覆盖不同尺寸的石墨纸,然后自动生成不同尺寸的低密度区,以尝试模拟DD一次高温制备SiC基体。随后研究了具有不同尺寸DD(Rdd,因此定义为DD宽度D与整个样品长度L的比率)的2D C/SiC的机械压缩。结果表明,当Rdd小于30%时,C/SiC复合材料的抗拉强度从初始的241.7MPa下降到最终的212.2MPa。随着Rdd的进一步增加,在88.8%以上的初始强度有趋于稳定的趋势。同时,随着Rdd的进一步增加,抗压强度从初始的280.3MPa下降到最终的232.2MPa,然后趋于稳定,为初始强度的82.2%。随着Rdd的增加,抗压强度下降幅度更大,并趋于稳定。结果表明,DD对C/SiC复合材料抗压强度的敏感性高于抗拉强度。此外,随着Rdd的增加,拉伸和压缩弹性模量都以几乎相同的程度下降,最终下降到初始值的83.25%,表明DD的增加很少进一步降低刚度。
Continuous carbon fiber reinforced silicon carbide matrix composites (C/SiCs) have been widely used in aeronautic and astronautic fields because of their more attractive high temperature properties with less structural weight. However, density defects (DD) with randomness and unpredictability will have a serious impact on the mechanical properties of the laminated C/SiC composites (2D C/SiCs). A novel method was presented, by masking graphite-papers with different sizes on the surface of the ground C/SiC composite plates and then automatically produced various size low density region to tentatively imitate the DD once high temperature fabrication of SiC matrix. The mechanical reduction on 2D C/SiCs with different size DD (Rdd, thus was defined as ratio of DD width D to whole sample length L) was investigated subsequently. Results show that, tensile strength of the C/SiCs continuously decreased from original 241.7 MPa to final 212.2 MPa when the Rddbelow 30%. There trended to stable tendency above 88.8% of original strength with further increase of the Rdd. Meanwhile, compressive strength was subjected to a larger decrease from original 280.3 MPa to final 232.2 MPa and then tended to be constant at 82.2% of original strength when the Rddfurther increased. The compressive strength decreased to a greater extent and tended to stabilize earlier as the Rddincreased. It pointed out that the DD caused higher sensitivity to the compressive strength of the C/SiCs than to the tensile strength. In addition, as the Rddincreased, both tensile and compressive elastic modulus decreased to the nearly same extent, eventually falling to 83.25% of the initial value, indicating that the increased DD fewly further reduced the stiffness.
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影响因子: 13.1
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