An intrinsic bond-centered electronic glass with unidirectional domains in underdoped cuprates
An intrinsic bond-centered electronic glass with unidirectional domains in underdoped cuprates
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DOI:
10.1126/science.1138584
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发表时间:
2007-03-09
期刊:
影响因子:
56.9
通讯作者:
Davis, J. C.
中科院分区:
文献类型:
--
作者:
Kohsaka, Y.;Taylor, C.;Davis, J. C.
Removing electrons from the CuO2 plane of cuprates alters the electronic correlations sufficiently to produce high-temperature superconductivity. Associated with these changes are spectral-weight transfers from the high-energy states of the insulator to low energies. In theory, these should be detectable as an imbalance between the tunneling rate for electron injection and extraction - a tunneling asymmetry. We introduce atomic-resolution tunneling-asymmetry imaging, finding virtually identical phenomena in two lightly hole-doped cuprates: Ca1.88Na0.12CuO2Cl2 and Bi2Sr2Dy0.2Ca0.8Cu2O8+delta. Intense spatial variations in tunneling asymmetry occur primarily at the planar oxygen sites; their spatial arrangement forms a Cu-O-Cu bond-centered electronic pattern without long-range order but with 4a(0)-wide unidirectional electronic domains dispersed throughout (a(0): the Cu-O-Cu distance). The emerging picture is then of a partial hole localization within an intrinsic electronic glass evolving, at higher hole densities, into complete delocalization and highest-temperature superconductivity.