Multiband Mobility in Semiconducting Carbon Nanotubes
Multiband Mobility in Semiconducting Carbon Nanotubes
复制标题
半导体碳纳米管的多能带迁移率
DOI：
10.1109/led.2009.2027615
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发表时间：
2009
影响因子：
4.9
通讯作者：
E. Pop
中科院分区：
文献类型：
--
作者：
Yang Zhao;A. Liao;E. Pop
我们提出了半导体单壁碳纳米管的新数据和一个紧凑的迁移率模型，只有两个可调参数，弹性和非弹性碰撞平均自由程在300 K。的迁移率随直径增加，随温度降低，并有一个更复杂的依赖于电荷密度。模型和数据表明，对于典型的单壁纳米管直径，由于第二子带的强散射效应，在高载流子密度（n > 0.5 nm-1）下，室温迁移率不超过10 000 cm 2/Vmiddots。
We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm2/Vmiddots at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.