A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides
A 135-150-GHz Frequency Tripler Using SU-8 Micromachined WR-5 Waveguides
复制标题
DOI：
10.1109/tmtt.2019.2955684
复制
发表时间：
2020-03-01
影响因子：
4.3
通讯作者：
Huggard, Peter G.
中科院分区：
文献类型：
--
作者：
Guo, Cheng;Dhayalan, Yuvaraj;Huggard, Peter G.
本文提出了一种基于SU-8微机械WR-5波导的135-150 GHz肖特基二极管无偏频三倍频器件。这种波导由五层432微米厚的镀银SU-8层组成，这些层容纳了二极管芯片，形成了输出匹配网络。输入匹配电路由计算机数控加工的波导片实现，同时为SU-8波导片提供支撑和热沉。针对SU-8材料导热系数低的特点，设计了辅助金属热路，并通过热模拟讨论了辅助金属热路的影响。热模拟结果表明，在二极管阳极功率为50 mW的情况下，SU-8三倍频二极管结处的最高温度预计为346K，仅比全金属等效器件高出7K。测试结果表明，该三倍频器的转换损耗为16~18dB，输入回波损耗优于18db。这项工作表明，SU-8微机械波导可用于封装高频半导体元件，与其他基于光刻技术的工艺(如硅深反应离子刻蚀)一样，具有亚微米特征分辨率的潜力。
This article presents a 135-150-GHz Schottky diode-based bias-less frequency tripler based on SU-8 micromachined WR-5 waveguides. The waveguides consist of five 432- mu m-thick silver-plated SU-8 layers, which house the diode chip and form the output matching network. The input matching circuit is realized in a computer numerical control (CNC) milled waveguide filter, which also provides support and thermal sink to the SU-8 waveguides. Considering the low thermal conductivity of the SU-8 material, auxiliary metallic thermal paths are designed, and the impact of these is discussed through thermal modeling. The thermal simulations show that under 50-mW power dissipation in the diode anodes, the maximum temperature of the SU-8 tripler is predicted to be 346 K at the diode junction, only 7 K higher than in an entirely metal equivalent. The tripler was measured to have a conversion loss of 16-18 dB and the input return loss is better than 18 dB. This work demonstrates that SU-8 micromachined waveguides can be used to package high-frequency semiconductor components, which, like other photolithography-based processes such as silicon deep reactive ion etching (Si-DRIE), has the potential for submicrometer feature resolution.