The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition
The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition
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DOI：
10.1143/jjap.37.4460
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发表时间：
1998-08-01
期刊：
影响因子：
--
通讯作者：
Speck, JS
中科院分区：
文献类型：
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作者：
Fini, P;Wu, X;Speck, JS
研究表明，用金属有机化学气相沉积(MOCVD)方法在蓝宝石衬底上生长的GaN薄膜的形貌演变和相关的扩展缺陷与生长环境密切相关。对于常用的两步生长工艺，改变生长参数，如反应器压力，会影响初始高温(HT)GaN的生长机制。通过透射电子显微镜、原子力显微镜和高分辨X射线衍射仪的测量，结果表明，通过改变高温GaN生长的初始条件，可以直接控制高温成核层(NL)上的HT岛的初始密度以及随后的穿线位错密度。
The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution Xray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.