Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS
Experimental and Theoretical Analyses of the Electrical SOA of Rugged p-Channel LDMOS
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DOI：
10.1109/led.2010.2081337
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发表时间：
2010-11
影响因子：
4.9
通讯作者：
A. Podgaynaya;R. Rudolf;D. Pogany;E. Gornik;M. Stecher
中科院分区：
文献类型：
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作者：
A. Podgaynaya;R. Rudolf;D. Pogany;E. Gornik;M. Stecher
对稳健性p沟道横向DMOS晶体管的电气安全工作区域进行了数值TCAD和传输线脉冲分析。所观察到的触发电流对所施加的栅极源电压的独立性归因于缺乏准饱和效应，而准饱和效应通常在n沟道LDMOS中观察到。分析了触发电压对通道长度和漂移区的依赖关系，并给出了与导通电阻（RDSon）的权衡。
Numerical TCAD and transmission line pulse analysis of an electrical safe operating area of a robust p-channel lateral DMOS transistor is performed. The observed independence of the trigger current on the applied gate-source voltage is attributed to a lack of quasi-saturation effect which is usually observed in an n-channel LDMOS. The dependence of the trigger voltage on the length of channel and drift regions is also analyzed, and the tradeoff with the specific on-resistance (RDSon) is given.