Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.
Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.
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非平衡金属-绝缘体转变时的介电击穿和雪崩。
DOI：
10.1103/physrevlett.107.276401
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发表时间：
2010
影响因子：
8.6
通讯作者：
J. Sethna
中科院分区：
文献类型：
--
作者：
Ashivni Shekhawat;S. Papanikolaou;S. Zapperi;J. Sethna
受最近VO（2）薄膜有限温度Mott转变实验的启发，我们提出了一个经典的粗晶粒介电击穿模型，其中每个自由度代表一个纳米晶粒，随着温度和电压的增加，该纳米晶粒在随机阈值下由于猝灭无序而从绝缘体转变为金属。我们描述了由此产生的非平衡金属-绝缘体过渡的性质，并解释了电阻跳变分布的普遍特征。我们预测，通过调整电压，另一个临界点接近，分离的阶段螺栓状雪崩的类似的。
Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.