Epitaxial lift-off of II–VI semiconductors from III–V substrates using a MgS release layer
Epitaxial lift-off of II–VI semiconductors from III–V substrates using a MgS release layer
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使用 MgS 释放层从 III-V 衬底上外延剥离 II-VI 半导体
DOI：
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发表时间：
2013
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影响因子：
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通讯作者：
K. Prior
中科院分区：
文献类型：
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作者：
A. Rajan;I. A. Davidson;R. Moug;K. Prior
外延提升（ELO）是一种允许外延层从原始衬底上移除并转移到新衬底上的后生长过程。ELO之前已经成功地证明了III-V材料和基于ZnSe的II-VI半导体使用mggs牺牲层。随着最近在GaP和InP衬底上成功生长出外延mggs层，在本文中，我们比较了在GaP， GaAs和InP衬底上生长的II-VI外延层的ELO，使用7-15 nm厚的mggs牺牲层。在InP和GaAs衬底上可以快速获得高质量的提升层。对于GaP基材，ELO要慢得多，只有使用ZnSe脱毛剂才能实现高质量的提升。ELO前后外延层的光致发光光谱显示出峰值位置的变化，这与外延层应变的变化相适应。用ELO制备的涂层平整无裂纹，是一种高效、方便的材料转移方法。
Epitaxial lift-off (ELO) is a post-growth process that allows an epitaxial layer to be removed from its original substrate and transferred to a new one. ELO has previously been successfully demonstrated for III–V materials and also ZnSe based II–VI semiconductors using a MgS sacrificial layer. Following the recent successful growth of epitaxial MgS layers on GaP and InP substrates, in this paper we compare ELO of II–VI epilayers grown on GaP, GaAs, and InP substrates using MgS sacrificial layers in the range of 7–15 nm thick. Good quality lifted layers are obtained rapidly from InP and GaAs substrates. For GaP substrates, ELO is much slower and good quality lifts have only been achieved with ZnSe epilayers. Photoluminescence spectra obtained from epitaxial layers before and after ELO show changes in peak positions, which are compatible with changes of strain in the layer. The layers produced by ELO are flat and free of cracks, suggesting that this is an efficient and convenient method for the transfer of ...