Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M = Ni, Cu, Pt) precursors
Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2 (M = Ni, Cu, Pt) precursors
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DOI：
10.1016/s0169-4332(99)00562-0
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发表时间：
2000-04-01
影响因子：
6.7
通讯作者：
Niinistö, L
中科院分区：
文献类型：
--
作者：
Utriainen, M;Kröger-Laukkanen, M;Niinistö, L
在250℃和1毫巴的条件下，研究了二价金属β -二酮型前驱体M(acac)₂（M = Ni、Cu和Pt）通过原子层外延（ALE）生长金属薄膜的可行性。通过两种不同的方法获得金属薄膜：（i）用H₂对吸附的前驱体进行逐层直接还原；（ii）首先通过ALE沉积金属氧化物薄膜，然后通过单独的还原步骤将其转化为金属形式。后一种情况通过将在250℃下以O₃为氧源沉积在玻璃基底上的NiO薄膜在260℃和1个大气压下用5% H₂还原为金属Ni得以证明。然而，原子力显微镜（AFM）研究表明形成了针孔，从而使NiO最初的致密结构发生变形。在通过H₂进行逐层直接还原的情况下，通过使用Ti、Al、Si(100)和玻璃基底，重点关注基底对薄膜生长的影响。X射线光电子能谱（XPS）和X射线衍射（XRD）研究表明，金属Ni、Cu和Pt薄膜的生长在Ti和Al基底上更有利。在Si基底上，薄膜生长受到互扩散和硅化物形成的限制；而在玻璃基底上，薄膜生长与前驱体的气相稳定性有关，并且主要通过热解进行。（C）2000 Elsevier Science B.V. 保留所有权利。
Feasibility of metallic thin film growth by atomic layer epitaxy (ALE) was studied in the case of divalent metal beta-diketonate-type precursor M(acac)(2) (M = Ni, Cu and Pt) at 250 degrees C and 1 mbar. Metallic films were obtained by two different approaches: (i) direct layer-by-layer reduction of the adsorbed precursor by H-2, and (ii) by first depositing a metal oxide thin film by ALE and then converting it to the metallic form by a separate reduction step. The latter case was demonstrated by converting a NiO thin film, deposited at 250 degrees C on glass substrate with O-3 as an oxygen source, to metallic Ni at 260 degrees C and 1 atm by 5% H-2. AFM study indicated, however, pinhole formation and, thus, deformation of the initial dense structure of NiO. In the case of direct layer-by-layer reduction by H-2, attention was focused on the effects of the substrate on the film growth by applying Ti, Al, Si(100) and glass substrates. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) studies indicated that metallic Ni, Cu and Pt film growth proceeded preferably on Ti and Al substrates. On Si substrate, the film growth was restricted by interdiffusion and silicide formation; whereas on the glass substrate, the dim growth was related to the gas phase stability of the precursors and proceeded mainly by pyrolysis. (C) 2000 Elsevier Science B.V. All rights reserved.